Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses-Reference-Cited by-同舟云学术

Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Published:2013-10-28 Issue:18 Volume:103 Page:183502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Luo Weichun,Yang Hong,Wang Wenwu,Zhao Lichuan,Xu Hao,Ren Shangqing,Tang Bo,Tang Zhaoyun,Xu Yefeng,Xu Jing,Yan Jiang,Zhao Chao,Chen Dapeng,Ye Tianchun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4826918

Reference20 articles.

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3. High dielectric constant oxides

4. Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption

5. S. E. Rauch, G. La Rosa, and F. J. Guarin, in 39th Annual Proceedings: International Reliability Physics Symposium 2001, Orlando, USA, 30 April–3 May 2001 (2001), pp. 399–405.

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