Influence of supersaturated melt for InP growth on InP‐InGaAsP interface of double‐heterostructure laser wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328550
Reference7 articles.
1. Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm
2. Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
3. High‐temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μm
4. Channelled substrate buried heterostructure InGaAsP/InP laser emitting at 1.55 μm
5. High quality LPE growth of InGaAsP/InP DH laser wafers under a PH3 ambient
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1. Erbium doping in InGaAsP grown by liquid‐phase epitaxy;Journal of Applied Physics;1992-01
2. Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er;Japanese Journal of Applied Physics;1991-11-15
3. LPE growth of InP/InGaAsP/InGaAs/InP heterostructure at normal cooling rate at 630°C;Journal of Crystal Growth;1988-02
4. Fabrication and lasing characteristics of 1.3‐μm InGaAsP multiquantum‐well lasers;Journal of Applied Physics;1986-01
5. LPE growth of InP and related alloys;Progress in Crystal Growth and Characterization;1986-01
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