Fabrication and lasing characteristics of 1.3‐μm InGaAsP multiquantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336832
Reference29 articles.
1. Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
2. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
3. Band‐to‐band Auger recombination in InGaAsP lasers
4. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
5. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption
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