Erbium doping in InGaAsP grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350677
Reference23 articles.
1. Incorporation of erbium in GaAs by liquid‐phase epitaxy
2. Extremely sharp erbium‐related intra‐4f‐shell photoluminescence of erbium‐doped GaAs grown by metalorganic chemical vapor deposition
3. 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy
4. Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers
5. Single longitudinal mode operation of Er‐doped 1.5‐μm InGaAsP lasers
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