High‐temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91688
Reference7 articles.
1. Ultimate low-loss single-mode fibre at 1.55 μm
2. Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm
3. Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
4. Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm
5. Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasers
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1. Optoelectronic Devices;Gas Source Molecular Beam Epitaxy;1993
2. Comparison of single‐ and double‐heterostructure AlGaAs/InGaP red light‐emitting diodes prepared by liquid‐phase epitaxy;Journal of Applied Physics;1992-04-15
3. Liquid-phase epitaxial growth of InGaP for red electroluminescent devices;Solid-State Electronics;1991-08
4. Interface abruptness and LED performance of the AlGaAs/InGaP single heterostructure grown by liquid-phase epitaxy;Journal of Crystal Growth;1991-07
5. Characterization of epitaxial In0.75Ga0.25As0.56P0.44 layers on InP grown by liquid phase epitaxy;Journal of Crystal Growth;1984-08
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