Characterization of epitaxial In0.75Ga0.25As0.56P0.44 layers on InP grown by liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. High‐temperature cw operation of GaInAsP/InP lasers emitting at 1.5 μm
2. 1.11-1.67 µm
3. Growth and characterization of 1.3 µm CW GaInAsP/InP lasers by liquid-phase epitaxy
4. Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm
5. Spectral losses of low-OH-content optical fibres
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1. Erbium doping in InGaAsP grown by liquid‐phase epitaxy;Journal of Applied Physics;1992-01
2. Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er;Japanese Journal of Applied Physics;1991-11-15
3. The effect of lattice mismatch on the properties of In1-xGaxAs/InP heterojunctions;Journal of Crystal Growth;1989-05
4. Preparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy;Journal of Materials Science;1989-03
5. High characteristic temperature of 1·3 µm crescent buried heterostructure laser diodes;Bulletin of Materials Science;1988-12
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