Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1340004
Reference9 articles.
1. Electromigration in multilayer metallization: Drift‐controlled degradation and the electromigration threshold of Al‐Si‐Cu/TiNxOy/TiSi2contacts
2. Realistic electromigration lifetime projection of VLSI interconnects
3. Interface diffusion and electromigration failure in narrow aluminium lines with barrier layers
4. Electromigration-induced drift in damascene and plasma-etched Al(Cu). II. Mass transport mechanisms in bamboo interconnects
5. Asymmetrical Critical Current Density and Its Influence on Electromigration of Two-Level W-Plug Interconnection
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