The Dynamic Behavior of Electromigration in a Novel Cu Tall Pillar/Cu Via Interconnect for Fan-out Packaging
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9501397/9501403/09501653.pdf?arnumber=9501653
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Applications of Ni and Ag metallizations at the solder/Cu interfaces in advanced high-power automobile interconnects: An electromigration study;Surface and Coatings Technology;2024-05
2. Microstructure and growth of Cu hillock on redistribution line under electromigration;Journal of Materials Science: Materials in Electronics;2024-03
3. An Electromigration Study of Cu Pillar Interconnects in Flip-chip QFN Packaging under Extreme Conditions for High-power Applications;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05
4. Materials Quest for Advanced Interconnect Metallization in Integrated Circuits;Advanced Science;2023-06-15
5. Electromigration in three-dimensional integrated circuits;Applied Physics Reviews;2023-05-16
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