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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

  • Published:2016-11-21 Issue:19 Volume:120 Page:193103
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Liu A. Y.1ORCID,Sun C.1ORCID,Markevich V. P.2ORCID,Peaker A. R.2,Murphy J. D.3,Macdonald D.1

Affiliation:

1. Research School of Engineering, Australian National University, Canberra, Australian Capital Territory 2601, Australia

2. Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

3. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

Funder

Australian Centre for Advanced Photovoltaics

Engineering and Physical Sciences Research Council (EPSRC)

Australian Renewable Energy Agency (ARENA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Industrial Czochralski n‐type Silicon Wafers: Gettering Effectiveness and Possible Bulk Limiting Defects;Solar RRL;2023-12-28

2. Dislocations in Crystalline Silicon Solar Cells;Advanced Energy and Sustainability Research;2023-12-27

3. Various impacts of firing temperature on crystalline silicon;SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS;2023

4. Status and perspectives of crystalline silicon photovoltaics in research and industry;Nature Reviews Materials;2022-03-07

5. Gettering in silicon photovoltaics: A review;Solar Energy Materials and Solar Cells;2022-01
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