Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3569890
Reference32 articles.
1. Millisecond minority carrier lifetimes in n-type multicrystalline silicon
2. Precipitates and hydrogen passivation at crystal defects in n- and p-type multicrystalline silicon
3. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
4. P-Type Versus n-Type Silicon Wafers: Prospects for High-Efficiency Commercial Silicon Solar Cells
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