Author:
Paterson G. W.,Bentley S. J.,Holland M. C.,Thayne I. G.,Long A. R.
Subject
General Physics and Astronomy
Reference18 articles.
1. Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+MOS capacitors: The interface state model and beyond
2. See, for example, R. J. W. Hill, X. Li, H. Zhou, D. S. Macintyre, S. Thoms, M. C. Holland, P. Longo, D. A. J. Moran, A. J. Craven, C. R. Stanley, A. Asenov, R. Droopad, M. Passlack, and I. G. Thayne, Device Research Conference 2009, 251 (2009).
3. GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors
4. Electrical properties of the gallium arsenide–insulator interface
5. Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献