Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors-Reference-Cited by-同舟云学术

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Published:2012-05-15 Issue:10 Volume:111 Page:104112
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Paterson G. W.,Bentley S. J.,Holland M. C.,Thayne I. G.,Ahn J.,Long R. D.,McIntyre P. C.,Long A. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4720940

Reference23 articles.

1. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

2. Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

3. Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+MOS capacitors: The interface state model and beyond

4. M. Egard, L. Ohlsson, B. N. Borg, L.E. Wernersson, and E. Lind, in Proceedings of 69th Annual Device Research Conference, Santa Barbara, CA, 06086641 (2011).

5. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

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