GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

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GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

Published:2007 Issue:3 Volume:25 Page:1024
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Holland M.,Stanley C. R.,Reid W.,Thayne I.,Paterson G. W.,Long A. R.,Longo P.,Scott J.,Craven A. J.,Gregory R.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and analysis of the admittance characteristics of n+metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3on In0.53Ga0.47As;Journal of Applied Physics;2012-04

2. Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses;Journal of Applied Physics;2011-12

3. Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics;Journal of Applied Physics;2011-09

4. Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+MOS capacitors: The interface state model and beyond;Journal of Applied Physics;2011-06-15

5. STEM-EELS investigations of high-k dielectrics;Journal of Physics: Conference Series;2010-02-01

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