Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma‐enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100915
Reference8 articles.
1. Multilayered encapsulation of GaAs
2. Hydrogen‐free SiN films deposited by ion beam sputtering
3. Structural and electrical properties of silicon nitride films prepared by multipolar plasma‐enhanced deposition
4. Design and Operation of ETA, an Automated Ellipsometer
5. Hydrogen content of a variety of plasma‐deposited silicon nitrides
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