Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films-Reference-Cited by-同舟云学术

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Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films

Published:2004-01 Issue:1 Volume:446 Page:23-28
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sahu B.S,Srivastava P,Agnihotri O.P,Lee H.C,Sekhar B.R,Mahapatra S,Tiwari M.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride

2. Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

3. Suppression of boron transport out of p[sup +] polycrystalline silicon at polycrystalline silicon dielectric interfaces

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1. Transformation of sputtered calcium copper titanate thin film into nanorods by sequential annealing;Ceramics International;2018-03

2. Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiN_x:H Thin Film for Si-Based Optoelectronic Devices;Solid State Phenomena;2011-05

3. Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film;Journal of Physics: Condensed Matter;2009-02-13

4. Characterisation of the silicon nitride thin films deposited by plasma magnetron;Surface and Interface Analysis;2008

5. Atomic spectrometry update. X-ray fluorescence spectrometry;Journal of Analytical Atomic Spectrometry;2004

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