Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366976
Reference26 articles.
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3. Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
4. Ultrathin device quality oxide‐nitride‐oxide heterostructure formed by remote plasma enhanced chemical vapor deposition
5. Advantages of thermal nitride and nitroxide gate films in VLSI process
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