Electronic conduction mechanisms in thin oxynitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349673
Reference9 articles.
1. Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas
2. Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices
3. Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation
4. Instabilities of metal‐oxide‐semiconductor transistor with high‐temperature annealing of its gate oxide in ammonia
5. Study of the electronic trap distribution at the SiO/sub 2/-Si interface utilizing the low-frequency noise measurement
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