Analytical model of gate leakage current through bilayer oxide stack in advanced MOSFET-Reference-Cited by-同舟云学术

Analytical model of gate leakage current through bilayer oxide stack in advanced MOSFET

Published:2015-04 Issue: Volume:80 Page:20-31
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Basak Rathin,Maiti Biswajit,Mallik Abhijit

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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