Erratum: ‘‘Electronic structures of In1−xGaxAs‐InP strained‐layer quantum wells’’ [J. Appl. Phys.65, 3096 (1989)]
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343440
Reference20 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
2. Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy
3. High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy
4. High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes
5. Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/InP (0.73≤x≤0.82)p‐type modulation‐doped single‐quantum‐well structures;Journal of Applied Physics;1994-04
2. Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence;Applied Physics Letters;1993-05-10
3. Optimized double heterojunction pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP (0.64>or=x>or=0.82)p-MODFETs and the role of strain in their design;IEEE Transactions on Electron Devices;1993
4. Optical and structural properties of MOVPE grown GaxIn1−xAs/InP strained multiple quantum well atructures;Journal of Electronic Materials;1992-03
5. Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells;IEEE Photonics Technology Letters;1992-01
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