Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98151
Reference10 articles.
1. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K
2. In0.53Ga0.47As FET's with insulator-assisted Schottky gates
3. Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance
4. Double heterostructure Ga0.47In0.53As MESFETs by MBE
5. Saturation velocity determination for In0.53Ga0.47As field‐effect transistors
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Heterostructure Field-Effect Transistors;Physics of High-Speed Transistors;1993
2. Superior microwave performance of InGaAs JFETs grown by MBE;Electronics Letters;1990-05-24
3. Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material;Semiconductors and Semimetals;1990
4. A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakage;IEEE Electron Device Letters;1989-08
5. Erratum: ‘‘Electronic structures of In1−xGaxAs‐InP strained‐layer quantum wells’’ [J. Appl. Phys.65, 3096 (1989)];Journal of Applied Physics;1989-06-15
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