High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

High‐temperature observation of heavy‐hole and light‐hole excitons in InGaAs/InP multiple quantum well structures grown by metalorganic molecular beam epitaxy

Published:1987-05-04 Issue:18 Volume:50 Page:1243-1245
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kawaguchi Yoshihiro,Asahi Hajime

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97922

Reference11 articles.

1. High‐speed optical modulation with GaAs/GaAlAs quantum wells in ap‐i‐ndiode structure

2. Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature

3. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells

4. Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio

5. Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators

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