Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19850265?crawler=true&mimetype=application/pdf
Reference9 articles.
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy;Journal of Applied Physics;1999-12-15
2. InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer;Japanese Journal of Applied Physics;1992-12-15
3. Effect of hot-electron injection of high-frequency characteristics of abrupt In/sub 0.52/(Ga/sub 1-x/Al/sub x/)/sub 0.48/As/InGaAs HBT's;IEEE Transactions on Electron Devices;1992-03
4. High-speed InGaAlAs/InAlAs multiple quantum well optical modulators;Journal of Lightwave Technology;1990-07
5. Room-temperature optical absorption and confinement effect in Ga0.47In0.53As/Al0.48In0.52As MQW;Semiconductor Science and Technology;1989-08-01
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