Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121000
Reference24 articles.
1. Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers
2. MOVPE of In(GaAs)P/InGaAs MQW structures
3. Band‐gap discontinuity control for InGaAs/InGaAsP multiquantum‐well structures by tensile‐strained barriers
4. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
5. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
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1. Effects of indium and nitrogen mole concentrations on the optical properties in a GaInNas/GaAs quantum well under the intense laser field;Journal of Luminescence;2013-02
2. Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field;The European Physical Journal B;2011-08
3. InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy;Acta Physica Sinica;2010
4. Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.;Journal of Applied Physics;2008-09-15
5. Persistent photoconductivity in InAsN/InGaAs quantum wells;Solid State Communications;2008-06
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