Band‐gap discontinuity control for InGaAs/InGaAsP multiquantum‐well structures by tensile‐strained barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109242
Reference6 articles.
1. Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current
2. Zero-net-strain multiquantum well lasers
3. Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers
4. Optical properties of III–V strained-layer quantum wells
5. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The improvement properties of InGaAs/InGaAsP multiple quantum wells using the GaAs insertion layer;Thin Solid Films;2022-08
2. Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures;Applied Physics Letters;1998-03-09
3. Study on interface abruptness of InxGa1−xAs/InyGa1−yAszP1−z heterostructures grown by gas-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
4. Gas-Source molecular beam epitaxy and characterization of inGaAs/lnGaAsP quantum well structures on InP;Journal of Electronic Materials;1996-07
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