Optical properties of III–V strained-layer quantum wells
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference52 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
3. InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
4. GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy
5. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
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1. Strain mapping by measurement of the degree of polarization of photoluminescence;Applied Optics;2004-03-19
2. Atomistic description of the electronic structure ofInxGa1−xAsalloys and InAs/GaAs superlattices;Physical Review B;2002-07-30
3. Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates;Applied Physics Letters;2002-04-29
4. Photoluminescence studies of GaAs/GaAlAs multiple quantum well heterostructures;Journal of Physics and Chemistry of Solids;2002-02
5. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
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