Persistent photoconductivity in InAsN/InGaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference26 articles.
1. Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells
4. Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures
5. InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38 [micro sign]m
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena;ACS Applied Materials & Interfaces;2018-03-05
2. Hierarchically constrained carrier dynamics in red-LED illuminated type-II InAs/GaSb superlattices;Journal of Applied Physics;2016-10-14
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