Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells-Reference-Cited by-同舟云学术

Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells

Published:2007-05-28 Issue:22 Volume:90 Page:221112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Motyka M.,Kudrawiec R.,Sęk G.,Misiewicz J.,Bisping D.,Marquardt B.,Forchel A.,Fischer M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2743382

Reference28 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs

3. Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy

4. InAsN/GaAs quantum dots with an intense and narrow photoluminescence peak at

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