Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Visible photoluminescence fromN-dot ensembles and the linewidth of ultrasmallAlyIn1−yAs/AlxGa1−xAs quantum dots
3. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Radiative recombination in type‐II GaSb/GaAs quantum dots
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1. Annihilation of arsenic-nitrogen bonding defects in annealed InAs1−xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE;Journal of Alloys and Compounds;2017-10
2. The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy;Nanotechnology;2008-10-09
3. Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence;Ultramicroscopy;2008-10
4. The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE;Materials Science and Engineering: B;2008-02
5. Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells;Journal of Applied Physics;2007-06
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