Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence-Reference-Cited by-同舟云学术

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Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence

Published:2008-10 Issue:11 Volume:108 Page:1495-1499
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Hsu Chiung-Chih,Hsu Ray-Quen,Wu Yue-Han,Chi Tung-Wei,Chiang Chen-Hao,Chen Jenn-Fang,Chang Mao-Nan

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes

2. Critical layer thickness for self-assembled InAs islands on GaAs

3. Nanoscale InP islands embedded in InGaP

4. Radiative recombination in type‐II GaSb/GaAs quantum dots

5. Effect of matrix on InAs self-organized quantum dots on InP substrate

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Dots of Indium Nitrides;Virtual Synthesis of Nanosystems by Design;2015

2. Morphology and optical properties of single- and multi-layer InAs quantum dots;Journal of Electron Microscopy;2010-06-24

3. Small InAsN and InN clusters: electronic properties and nitrogen stability belt;The European Physical Journal D;2010-03-16

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