Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4875383
Reference23 articles.
1. Memristive devices for computing
2. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
3. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
4. Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes
5. Random Circuit Breaker Network Model for Unipolar Resistance Switching
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