Author:
Jiao Jin-Long,Gan Qiu-Hong,Cheng Shi,Liao Ye,Ke Shao-Ying,Huang Wei,Wang Jian-Yuan,Li Cheng,Chen Song-Yan
Abstract
The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current. In the present work, the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO2/Pt RRAM device. The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism, which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.
Subject
General Physics and Astronomy
Cited by
1 articles.
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