The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories-Reference-Cited by-同舟云学术

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

Published:2017-05-01 Issue:19 Volume:33 Page:4654-4665
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Rahaman Sk. Ziaur¹^ORCID,Lin Yu-De¹,Lee Heng-Yuan¹,Chen Yu-Sheng¹,Chen Pang-Shiu²,Chen Wei-Su¹,Hsu Chien-Hua¹,Tsai Kan-Hsueh¹,Tsai Ming-Jinn¹,Wang Pei-Hua¹

Affiliation:

1. Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

2. Department of Materials Science and Engineering, MingShin University of Science and Technology, Hsinchu 304, Taiwan

Funder

Industrial Technology Research Institute

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.7b00479

Reference56 articles.

1. Nanoionics-based resistive switching memories

2. Resistive switching in transition metal oxides

3. Memristive switching mechanism for metal/oxide/metal nanodevices

4. Low power operating bipolar TMO ReRAM for sub 10 nm era

5. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

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