Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors
Author:
Affiliation:
1. Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
2. Université Grenoble-Alpes, 38000 Grenoble, France
3. CEA Grenoble, INAC-PHELIQS, 38000 Grenoble, France
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4959831
Reference17 articles.
1. 317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance
2. Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
3. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts
4. AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
5. High voltage AlGaN/GaN metal–oxide–semiconductor high-electron mobility transistors with regrown In0.14Ga0.86N contact using a CMOS compatible gold-free process
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