Impact ionization in strained Si devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2136210
Reference9 articles.
1. Strained Si CMOS (SS CMOS) technology: opportunities and challenges
2. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations
3. Impact ionization MOS (I-MOS)-Part II: experimental results
4. Positive Temperature Coefficient of Impact Ionization in Strained-Si
5. M. Jurzak, T. Skotnicki, G. Ricci, Y. Campidelli, C. Hernandez, and D. Bensahel, Proceedings of the 29th European Solid State Device Research Conference, 1999, pp. 340–307.
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact strain engineering on gate stack quality and reliability;Solid-State Electronics;2008-08
2. Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2008-04-25
3. Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors;Applied Physics Letters;2008-04-14
4. Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers;Journal of Applied Physics;2007-12-15
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