Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
2. Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs
3. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
4. On the Origin of Increase in Substrate Current and Impact Ionization Efficiency in Strained-Si n- and p-MOSFETs
5. Thermal and Electrical Properties of Heavily Doped Ge‐Si Alloys up to 1300°K
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Asymmetric Intermixing and the Stress Buildup in Ni/Al-typed Nanomultilayer with Different Characteristic Scales;Rare Metal Materials and Engineering;2017-11
2. Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs;Microelectronics Reliability;2010-05
3. Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor;Japanese Journal of Applied Physics;2010-04-20
4. Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2009-04-20
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