Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2790813
Reference14 articles.
1. Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
2. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
3. 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes
4. Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer
5. Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
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1. Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives;physica status solidi (a);2022-02-05
2. Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs;physica status solidi (a);2019-08-05
3. Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers;Japanese Journal of Applied Physics;2019-05-22
4. Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates;Journal of Physics D: Applied Physics;2019-01-16
5. AlGaN devices and growth of device structures;Journal of Materials Science;2015-02-24
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