Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives-Reference-Cited by-同舟云学术

Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives

Published:2022-02-05 Issue:7 Volume:219 Page:2100605
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Khan Muhammad Ajmal¹²^ORCID,Maeda Noritoshi¹,Jo Masafumi¹,Yamada Yoichi³,Hirayama Hideki¹

Affiliation:

1. RIKEN Cluster for Pioneering Research (CPR) 2-1 Hirosawa Wako Saitama 351-0198 Japan

2. Research and Development Department Farmroid Co. Ltd. 3-22-4 Funado Itabashi-ku Tokyo 174-0041 Japan

3. Department of Electrical and Electronic Engineering Yamaguchi University 2-16-1 Tokiwadai Ube Yamaguchi 755-8611 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100605

Reference62 articles.

1. Minamata http://www.mercuryconvention.org/(accessed: August 2021).

2. GaN-free transparent ultraviolet light-emitting diodes

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

4. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

5. Review—The Current and Emerging Applications of the III-Nitrides

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