Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces
Author:
Affiliation:
1. Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112, USA
Funder
Semiconductor Research Corporation (SRC)
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931065
Reference29 articles.
1. Atomic scale imaging and spectroscopy of individual electron trap states using force detected dynamic tunnelling
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4. Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics
5. Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems
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