Atomic scale imaging and spectroscopy of individual electron trap states using force detected dynamic tunnelling-Reference-Cited by-同舟云学术

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Atomic scale imaging and spectroscopy of individual electron trap states using force detected dynamic tunnelling

Published:2009-01-12 Issue:5 Volume:20 Page:055701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Johnson J P,Zheng N,Williams C C

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=5/a=055701/pdf

Reference21 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Nonlinear alternating-current tunneling microscopy

3. Alternating current scanning tunneling spectroscopy of self‐assembled monolayers on gold

4. Spatial location of electron trapping defects on silicon by scanning tunneling microscopy

5. Nanometer-Scale Creation and Characterization of Trapped Charge in SiO2Films Using Ballistic Electron Emission Microscopy

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1. Spatially Resolved Dielectric Loss at the Si/SiO2 Interface;Physical Review Letters;2024-06-17

2. Mapping orbital changes upon electron transfer with tunnelling microscopy on insulators;Nature;2019-02

3. Consecutive Charging of a Molecule-on-Insulator Ensemble Using Single Electron Tunnelling Methods;Nano Letters;2016-01-07

4. Dynamic tunneling force microscopy for characterizing electronic trap states in non-conductive surfaces;Review of Scientific Instruments;2015-09

5. Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy;Physical Review B;2015-05-22

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