Spatial location of electron trapping defects on silicon by scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96702
Reference8 articles.
1. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
2. 7 × 7 Reconstruction on Si(111) Resolved in Real Space
3. Electron emission in intense electric fields
4. Electron emission in intense electric fields
5. Oxide Growth on Etched Silicon in Air at Room Temperature
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