Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4955465
Reference27 articles.
1. Challenges in SiC power MOSFET design
2. Challenges for energy efficient wide band gap semiconductor power devices
3. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC
4. Effect of interface states on electron transport in 4H-SiC inversion layers
5. Band alignment and defect states at SiC/oxide interfaces
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1. Polarons as a universal source of leakage currents in amorphous oxides: a multiscale modeling approach;Oxide-based Materials and Devices XIV;2023-03-16
2. Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing;Journal of Applied Physics;2022-12-28
4. Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs;Applied Physics Letters;2022-12-05
5. Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part II: The Role of Polarons;IEEE Transactions on Electron Devices;2022-08
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