Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs
Author:
Affiliation:
1. CNR-IMM,Catania,Italy,95121
2. STMicroelectronics,Catania,Italy,95121
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118116.pdf?arnumber=10118116
Reference6 articles.
1. Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs
2. Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
3. Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
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