Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs
Author:
Affiliation:
1. Consiglio Nazionale delle Ricerche–Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5-Zona Industriale, 95121 Catania, Italy
2. STMicroelectronics, Stradale Primosole n. 50-Zona Industriale, 95121 Catania, Italy
Funder
Electronic Components and Systems for European Leadership
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0012399
Reference29 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
3. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
4. Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
5. Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
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2. Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model;Japanese Journal of Applied Physics;2024-01-01
3. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01
4. Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps;Materials Science in Semiconductor Processing;2024-01
5. Blocking transition of interface traps in MoS2/SiO2 field-effect transistors;Physical Review B;2023-11-09
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