Challenges in SiC power MOSFET design
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. An approach to model temperature effects of interface traps in 4H-SiC;Rao Ramakrishna;Mater Sci Forum,2007
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3. Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors;Li;J Electron Mater,2000
4. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor;Potbhare;J Appl Phys,2006
5. Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface;Lu;IEEE Trans Electron Dev,2003
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