Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3689766
Reference28 articles.
1. Advances in SiC power MOSFET technology
2. Recent Advances in SiC Power Devices
3. Vital Issues for SiC Power Devices
4. Thermal oxidation temperature dependence of 4H-SiC MOS interface
5. The mechanism of defect creation and passivation at the SiC/SiO2interface
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1. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal;Materials Science in Semiconductor Processing;2021-02
2. TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing;Current Applied Physics;2020-12
3. Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors;Applied Surface Science;2020-11
4. Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs;Journal of Crystal Growth;2020-02
5. Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing;Physica Scripta;2019-10-22
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