Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Difference of near-interface strain in SiO2 between thermal oxides grown on 4H-SiC by dry-O2 oxidation and H2O oxidation characterized by infrared spectroscopy
2. Effects of interface state density on 4H-SiC n-channel field-effect mobility
3. Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors
4. Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors
5. 4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping
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