Vital Issues for SiC Power Devices
Author:
Affiliation:
1. Denso Corporation
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.901.pdf
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 4H-silicon carbide as particle detector for high-intensity ion beams;Journal of Instrumentation;2022-01-01
2. SiC power device design and fabrication;Wide Bandgap Semiconductor Power Devices;2019
3. Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing;Ceramics International;2018-08
4. Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor;Solid-State Electronics;2018-01
5. Numerical Study on the Growth Rate of Silicon Carbide Single Crystals in a High Temperature Chemical Vapor Deposition System;Journal of Nanoscience and Nanotechnology;2017-11-01
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