Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415401
Reference16 articles.
1. Structure and stability of ultrathin zirconium oxide layers on Si(001)
2. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
3. Atomic Transport and Chemical Stability during Annealing of UltrathinAl2O3Films on Si
4. Trap-assisted tunneling in high permittivity gate dielectric stacks
5. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
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