Improved contact characteristics of laser-annealed p-GaN coated with Ni films
Author:
Affiliation:
1. Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
2. Center for Nanotechnology, Microsystems and Materials Science, National Tsing Hua University, Hsinchu 30013, Taiwan
Funder
Department of Industrial Technology, Ministry of Economic Affairs, Republic of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4929522
Reference20 articles.
1. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
2. H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition
3. Effects of the gas ambient in thermal activation of Mg-doped p-GaN on Hall effect and photoluminescence
4. A study of the material loss and other processes involved during annealing of GaN at growth temperatures
5. Effect of thermal annealing of Ni/Au ohmic contact on the leakage current of GaN based light emitting diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent progress of laser processing technology in micro-LED display manufacturing: A review;Optics & Laser Technology;2025-02
2. Applications of lasers: A promising route toward low-cost fabrication of high-efficiency full-color micro-LED displays;Opto-Electronic Science;2023
3. Laser‐Based Micro/Nano‐Processing Techniques for Microscale LEDs and Full‐Color Displays;Advanced Materials Technologies;2022-11-04
4. Over 1 GW/cm2 for high-power GaN p-i-n diodes with edge termination structure and laser annealing;Journal of Vacuum Science & Technology B;2019-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3