H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

H-Atom Incorporation in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Deposition

Published:1994-10-01 Issue:Part 2, No. 10A Volume:33 Page:L1367-L1369
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohba Yasuo,Hatano Ako

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08

2. Wide range doping control and defect characterization of GaN layers with various Mg concentrations;Journal of Applied Physics;2018-10-28

3. Improved Mg Dopant Activation in p-GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus;physica status solidi (a);2018-06-25

4. Hydrogen diffusion in GaN:Mg and GaN:Si;Journal of Alloys and Compounds;2018-05

5. Improved contact characteristics of laser-annealed p-GaN coated with Ni films;Journal of Applied Physics;2015-08-28

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP